View STB20PF75_1317838.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

STB20PF75
P-CHANNEL 75V - 0.10 - 20A DPAK STripFETTM II POWER MOSFET
TYPE STB20PF75

VDSS 75 V
RDS(on) < 0.12
ID 20 A
TYPICAL RDS(on) = 0.10 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION
3 1
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS MOTOR CONTROL DC-DC & DC-AC CONVERTERS
D2PAK TO-263 (Suffix "T4") ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM(*) Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 75 75 20 20 14 80 80 0.53 10 350 -55 to 175 Unit V V V A A A W W/C V/ns mJ C
(*) Pulse width limited by safe operating area
(1) ISD 20A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX (2) Starting Tj = 25 oC, ID = 10 A, VDD = 30V
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
March 2004
1/9
STB20PF75
THERMAL DATA
Rthj-case Rthj-PCB Tl Thermal Resistance Junction-case Thermal Resistance Junction-PCB Maximum Lead Temperature For Soldering Purpose (1.6 mm from case, for 10 sec) Max Max Typ 1.88 34 300 C/W C/W C
(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF
Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20 V Min. 75 1 10 100 Typ. Max. Unit V A A nA
IGSS
ON (*)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 A ID = 10 A Min. 2 Typ. 3 0.10 Max. 4 0.12 Unit V
DYNAMIC
Symbol gfs Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V ID = 10 A Min. Typ. 15 1150 170 70 Max. Unit S pF pF pF
VDS = 25V, f = 1 MHz, VGS = 0
2/9
STB20PF75
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON (*)
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 37.5 V ID = 10 A VGS = 10 V RG = 4.7 (Resistive Load, Figure 1) VDD=60V ID=20A VGS=10V (See test circuit, Figure 2) Min. Typ. 20 51 38 7 10 52 Max. Unit ns ns nC nC nC
SWITCHING OFF (*)
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions VDD = 60 V ID = 10 A VGS = 10 V RG = 4.7 (Resistive Load, Figure 1) Min. Typ. 40 13 Max. Unit ns ns
SOURCE DRAIN DIODE (*)
Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A VGS = 0 80 250 6.2 Test Conditions Min. Typ. Max. 20 80 1.3 Unit A A V ns nC A
ISD = 20 A di/dt = 100A/s Tj = 150C VDD = 25 V (see test circuit, Figure 3)
(*) Pulse width [ 300 s, duty cycle 1.5 %. (*) Pulse width limited by TJMAX
Safe Operating Area
Thermal Impedance
3/9
STB20PF75
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/9
STB20PF75
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
.
.
5/9
STB20PF75
Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Diode Recovery Behaviour
6/9
STB20PF75 D2PAK MECHANICAL DATA
DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 0 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.591 0.050 0.055 0.094 0.015 8 mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.21 8.95 8 10.4 0.394 0.334 0.208 0.624 0.055 0.069 0.126 TYP. MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.028 0.045 0.018 0.048 0.352 0.315 0.409 inch. TYP. TYP. 0.181
0.106
0.009 0.037 0.067 0.024 0.054 0.368
7/9
STB20PF75
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.795 0.960 3.937 1.197 1.039 0.520 inch MIN. MAX. 12.992
BASE QTY 1000
BULK QTY 1000
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 0.35 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 MIN. 0.413 0.618 0.059 0.062 0.065 0.449 0.189 0.153 0.468 0075 1.574 .0.0098 0.933 0.0137 0.956 inch MAX. 0.421 0.626 0.063 0.063 0.073 0.456 0.197 0.161 0.476 0.082
* on sales type
8/9
STB20PF75
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners.
(c) 2004 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. www.st.com
9/9

▲Up To Search▲

Price & Availability of STB20PF75

	To Download STB20PF75 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .